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FDMC8554 N-Channel PowerTrench(R) MOSFET
February 2007
FDMC8554 N-Channel Power Trench(R) MOSFET
20V, 16.5A, 5m Features
Max rDS(on) = 5m at VGS = 10V, ID = 16.5A Max rDS(on) = 6.4m at VGS = 4.5V, ID = 14A Low Profile - 1mm max in a MicroFET 3.3x3.3 mm RoHS Compliant
tm
General Description
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor`s advanced Power Trench process. It has been optimized for switching performance and ultra low rdson.
Application
Synchronous rectifier ORing FET POL rectifier
Bottom 7 8 D D 1 D D
Top
5
6
D D
G
5 6 7 8
4 3 2 1
G S S S
D D
4
3
2
S
S
S
Power 33
MOSFET Maximum Ratings TA = 25C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TC = 25C TA = 25C (Note 1a) TC = 25C TC = 25C TA = 25C (Note 1a) Ratings 20 20 16.5 72 16.5 36 41 2.0 -55 to +150 W C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3 60 C/W
Package Marking and Ordering Information
Device Marking FDMC8554 Device FDMC8554 Package Power 33 Reel Size 7'' Tape Width 8mm Quantity 3000 units
(c)2007 Fairchild Semiconductor Corporation FDMC8554 Rev.C
1
www.fairchildsemi.com
FDMC8554 N-Channel PowerTrench(R) MOSFET
Electrical Characteristics TJ = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 16V, VGS = 0V TJ = 125C VGS = 20V, VDS = 0V 20 15.7 1 100 100 V mV/C A nA
On Characteristics
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 16.5A VGS = 4.5V, ID = 14A VGS = 10V, ID = 16.5A, TJ = 125C VDS = 5V, ID = 16.5A 1.0 1.8 -6.1 3.6 4.6 5.4 62 5.0 6.4 7.1 S m 3.0 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 10V, VGS = 0V, f = 1MHz f = 1MHz 2540 795 510 1.2 3380 1060 765 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Total Gate Charge at 4.5V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDD = 10V, ID = 16.5A VDD = 10V, ID = 16.5A VGS = 10V, RGEN = 6 13 10 32 7 44 24 8.5 10 24 20 51 14 62 34 ns ns ns ns nC nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 16.5A (Note 2) 0.8 31 22 1.3 47 33 V ns nC IF = 16.5A, di/dt = 100A/s
Notes: 1: RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 60C/W when mounted on a 1 in2 pad of 2 oz copper b. 135C/W when mounted on a minimum pad of 2 oz copper
2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.
FDMC8554 Rev.C
2
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FDMC8554 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
200
VGS = 4.5V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
3
VGS = 3.5V VGS = 4V VGS =4.5V VGS = 5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
ID, DRAIN CURRENT (A)
150
VGS =5V VGS = 10V
2
VGS = 4V
100
1
VGS = 10V
50
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
VGS = 3.5V
0 0 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 1 5
0 0 50 100 150 ID, DRAIN CURRENT(A) 200
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
20
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.6 1.4 1.2 1.0 0.8 0.6 -75
ID = 16.5A VGS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m)
ID = 16.5A
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
15
10
TJ = 125oC
5
TJ = 25oC
0
-50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
3
4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. Normalized On- Resistance vs Junction Temperature
100 ID, DRAIN CURRENT (A)
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
Figure 4. On-Resistance vs Gate to Source Voltage
100
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
10
TJ = 150oC
75
VDD = 5V TJ = 150oC
1
TJ = 25oC
50
0.1 0.01 1E-3 0.0
TJ = -55oC
25
TJ = 25oC TJ = -55oC
0 0 1 2 3 VGS, GATE TO SOURCE VOLTAGE (V) 4
0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
FDMC8554 Rev.C
3
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FDMC8554 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
VGS, GATE TO SOURCE VOLTAGE(V)
10
ID = 16.5A VDD = 5V
5000
Ciss
8
VDD = 10V
CAPACITANCE (pF)
Coss
6 4 2 0 0 10 20 30 Qg, GATE CHARGE(nC) 40 50
1000
VDD = 15V
Crss
f = 1MHz VGS = 0V
100 0.1
1 10 VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
80
40 IAS, AVALANCHE CURRENT(A)
ID, DRAIN CURRENT (A)
60
VGS = 10V
10
TJ = 25oC
40
Limited by Package VGS = 4.5V
TJ = 125oC
20
RJC = 3 C/W
o
1 -2 10
0 10
-1
10
0
10
1
10
2
10
3
25
50
75
100
o
125
150
tAV, TIME IN AVALANCHE(ms)
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching Capability
P(PK), PEAK TRANSIENT POWER (W)
Figure 10. Maximum Continuous Drain Current vs Ambient Temperature
300
100
VGS = 10V
TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - T A ---------------------125
100
rDS(on)LIMITED
ID, DRAIN CURRENT (A)
10
1ms 10ms
1
100ms
10
0.1
SINGLE PULSE TJ = MAX RATED RJA=135OC/W TA = 25OC
1s 10s DC
SINGLE PULSE
1
R
JA
=135 C/W
-2 -1 0 1 2 3
O
0.01 0.01
0.1
1
10
100
0.5 -3 10
10
10
10
10
10
10
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
FDMC8554 Rev.C
4
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FDMC8554 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
2
1
NORMALIZED THERMAL IMPEDANCE, ZJA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
0.01
SINGLE PULSE RJA = 135 C/W
o
0.002 -3 10
10
-2
10 10 10 t, RECTANGULAR PULSE DURATION(s)
-1
0
1
10
2
10
3
Figure 13. Transient Thermal Response Curve
FDMC8554 Rev.C
5
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FDMC8554 N-Channel PowerTrench(R) MOSFET
FDMC8554 Rev.C
6
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FDMC8554 N-Channel PowerTrench(R) MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I22 FDMC8554 Rev.C 7 www.fairchildsemi.com

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